Latest topics
» 2-1 E.D.C. LAB VIVA!
Thu Feb 14, 2013 9:09 pm by Shiva1029

» 2-1 E.D.C. LAB MANUAL
Wed Feb 13, 2013 3:59 pm by Shiva1029

» 2-1 B.S LAB VIVA QUESTIONS
Wed Feb 13, 2013 3:59 pm by Shiva1029

» Send all your requests to this website
Wed Feb 13, 2013 3:53 pm by Shiva1029

» ECE GCTC 2-2 RESULTS REGUALAR+SUPPLY!
Fri Jul 06, 2012 6:32 pm by Shiva1029

» 2-2 PDC LAB MANUAL
Mon Apr 02, 2012 7:24 pm by Shiva1029

» 2-1 B.S. LAB F.F.T. Output
Sun Mar 25, 2012 7:24 pm by Shiva1029

» 2-1 E.D.C IMP QUESTIONS MID-I
Sat Sep 03, 2011 2:46 pm by Admin

» 2-1 E.D.C IMP QUESTIONS MID-I
Sat Sep 03, 2011 2:45 pm by Admin

Search
 
 

Display results as :
 


Rechercher Advanced Search

May 2013
MonTueWedThuFriSatSun
  12345
6789101112
13141516171819
20212223242526
2728293031  

Calendar Calendar


2-1 E.D.C IMP QUESTIONS MID-I

View previous topic View next topic Go down

2-1 E.D.C IMP QUESTIONS MID-I

Post  Admin on Sat Sep 03, 2011 2:44 pm

2-1 E.D.C IMP QUESTIONS MID-I



Code:
http://www.mediafire.com/?35l9r8n8n54c1r0


MID-I QUESTION PAPER
SUBJECT:EDC Year and Sem: II-I
UNIT-I
1.Derive the equation for Diode and discuss about various parameters involved in the equation.
2.Expalin the V-I characteristics of PN diode in Forward bias and Reverse bias with neat
Sketches
3.Define the terms given below
a) Diffusion current b)Drift current c)Reverse saturation current d) cut in voltage
e) Barrier potential.
4.a)Explain Zener diode characteristics in reverse bias
b)Determine forward current in case of PN junction diode with I0=10micro amps,Vf=0.8V,
at T=3000k,Assume silicon diode.
5.Write the differences between
a) Zener Break down and Avalanche breakdown
b) Zener diode and PN diode

UNIT-II
1.Explain Full wave rectifier operation and derive all the necessary parameters of FWR.
2.Determine a)D.C. output voltage b) PIV c)Rectifier efficiency of FWR with Ep(rms)=230V
N1/N2=5/1,RL=100Ω.
3.Derive the ripple factor of π-filter with neat sketch.
4.Draw the block diagram of Regulated power supply and explain its operation
5.a)Comparison of Filter circuits(L,C,LC,π filters)
b)Comparison between FWR using 2 diodes and 4 diodes.

UNIT-III
1.a)What is early effect ? how it it modify the V-I characteristics of BJT
b)CalculateIc and IE for a transistor with αd.c=0.99 and ICB0=5microamps,IB=20microamps
2.Explain the input output characteristics of common base configuration with neat sketches
3.a)Why CE circuit if preferred than CB
b) Differences between CB,CE,CC configurations
4.Explain the input output characteristics of common emitter configuration with neat sketches
5.a)Define a transistor? Types of BJTs with symbols
b)Relation between αd.c andβd.c

UNIT-IV
1.Derive the stability factors S,S’,S” and what is the need of this in BJT circuits and obtain the
Equation of it.
2.Explain the D.C load line analysis of CE amplifier.
3.a)What is the need of biasing.
b)Explain the parameters which are effecting the operating point
4.Explain Fixed bias operation & find S,S’,S” for the same.
5.Draw D.C load line and A.C load line for a CE amplifier with Vcc=12V,R1=8KΩ,R2=4KΩ,
Rc=1KΩ,RE=2KΩ,RL=1KΩ.






Cool

Admin
Admin

Posts: 21
Points: 60
Join date: 2011-08-21
Age: 20
Location: Hyderabad

View user profile http://collegestash.forumotions.in

Back to top Go down

View previous topic View next topic Back to top

- Similar topics

Permissions in this forum:
You cannot reply to topics in this forum